Near-infrared to red-light emission and carrier dynamics in full series multilayer GaTe1−xSex (0≤x≤1) with structural evolution

Abstract Two-dimensional layered gallium monochalcogenide (Ga X , where = S, Se, Te) semiconductors possess great potential for use in optoelectronic and photonic applications, owing to their direct band edge. In this work, the structural optical properties of full-series multilayer GaTe 1− x Se 0 1 are examined. The experimental results show that whole series layers may contain one hexagonal (H) phase from GaSe, whereas monoclinic (M) predominates at ≤ 0.4. For ≥ 0.5, H-phase dominates series. micro-photoluminescence (μPL) indicate photon emission energy M-phase increases as content 1.652 eV (M-GaTe) 1.779 (M-GaTe 0.6 0.4 ), decreases 1.998 (H-GaSe) 1.588 (H-GaTe) red near-infrared (NIR) region. Micro-time-resolved photoluminescence (TRPL) area-fluorescence lifetime mapping (AFLM) few-layer indicates decay band-edge M is faster than H mixed alloys (0 0.4). On other hand, also increases, surface effect. dark resistivity 0.5 (i.e., predominantly phase) greater instance majority 1−x 0.4, larger bandgaps. (0.5 1) shows a photoconductive response under visible-light illumination because contribution states. superior light-emission photodetection capability multilayers means they can be used future devices.